PART |
Description |
Maker |
STK621-041 |
TENTATIVE
|
Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|
P0430WQLC-T |
Tentative Product Specification
|
AZ Displays
|
G141I1-L01 |
TFT LCD Tentative Specification
|
AZ Displays
|
R5F21344MDFP R5F21344MNFP R5F21345MDFP R5F21345MNF |
Specifications in this document are tentative and subject to change
|
Renesas Electronics Corporation
|
2SD371 |
SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR(TENTATIVE)
|
List of Unclassifed Manufacturers
|
TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
TC58NVG1S8BFT00 TC58NVG1S3BFT00 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
TAN-326 |
Tentative Data Audio IC Application Circuit Example of 3-V FM Radio Circuit TA2111FN TC9418FN Compact Module
|
TOSHIBA
|
TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS 512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
2SK3022TENTATIVE |
2SK3022 (Tentative) - N-Channel Power F-MOS FET Power F-MOS FETs
|
Matsshita / Panasonic
|
2SK3031TENTATIVE 2SK30ATMR 2SK30ATMGR |
2SK3031 (Tentative) - N-Channel Power F-MOS FET Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 300UA我(直)|92 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 2.6MA我(直)|2
|
KEMET, Corp. Electronic Theatre Controls, Inc.
|